New 128Gb Device Ideal for Small Form Factor Tablets, Smartphones, SSDs and High-Performance Compute Devices

http://newsroom.intel.com/community/intel_newsroom/blog/2011/12/06/intel-micron-extend-nand-flash-technology-leadership-with-introduction-of-worlds-first-128gb-nand-device-and-mass-production-of-64gb-20nm-nand

 

 

SANTA CLARA, Calif. and BOISE, Idaho, Dec. 6, 2011 – Intel Corporation and Micron Technology, Inc., today announced a new benchmark in NAND flash technology – the world’s first 20 nanometer (nm), 128 gigabit (Gb), multilevel-cell (MLC) device. The companies also announced mass production of their 64Gb 20nm NAND, which further extends the companies’ leadership in NAND process technology.

 

Developed through Intel and Micron’s joint-development venture, IM Flash Technologies (IMFT), the new 20nm monolithic 128Gb device is the first in the industry to enable a terabit (Tb) of data storage in a fingertip-size package by using just eight die. It also provides twice the storage capacity and performance of the companies’ existing 20nm 64Gb NAND device. The 128Gb device meets the high-speed ONFI 3.0 specification to achieve speeds of 333 megatransfers per second (MT/s), providing customers with a more cost-effective solid-state storage solution for today’s slim, sleek product designs, including tablets, smartphones and high-capacity solid-state drives (SSDs.)

 

“As portable devices get smaller and sleeker, and server demands increase, our customers look to Micron for innovative new storage technologies and system solutions that meet these challenges,” said Glen Hawk, vice president of Micron’s NAND Solutions Group. “Our collaboration with Intel continues to deliver leading NAND technologies and expertise that are critical to building those systems.”

 

The companies also revealed that the key to their success with 20nm process technology is due to an innovative new cell structure that enables more aggressive cell scaling than conventional architectures. Their 20nm NAND uses a planar cell structure – the first in the industry – to overcome the inherent difficulties that accompany advanced process technology, enabling performance and reliability on par with the previous generation. The planar cell structure successfully breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production.

 

“It is gratifying to see the continued NAND leadership from the Intel-Micron joint development with yet more firsts as our manufacturing teams deliver these high-density, low-cost, compute-quality 20nm NAND devices,” said Rob Crooke, Intel vice president and general manager of Intel’s Non-Volatile Memory Solutions Group. “Through the utilization of planar cell structure and Hi-K/Metal gate stack, IMFT continues to advance the technological capabilities of our NAND flash memory solutions to enable exciting new products, services and form factors.”


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